ISO 12406:2010
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon
OVERVIEW
ISO 12406:2010 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 x 1016 atoms/cm3 and 2,5 x 1021 atoms/cm3, and to crater depths of 50 nm or deeper.
COMMENTS
-
PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2010 |
| No. of Pages | 13 |
| ICS Classification | 71.040.40 Chemical analysis |
| Committee | ISO/TC 201/SC 6 |
| Available for Purchase | For sale in Singapore only |
| Adoption | ISO |