IEC 63284:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
OVERVIEW
IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
COMMENTS
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PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2022 |
| No. of Pages | 25 |
| ICS Classification | 31.080.30 Transistors |
| Committee | TC 47 |
| Available for Purchase | For sale in Singapore only |
| Adoption | IEC |