ISO 23812:2009
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
OVERVIEW
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
COMMENTS
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PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2009 |
| No. of Pages | 19 |
| ICS Classification | 71.040.40 Chemical analysis |
| Committee | ISO/TC 201/SC 6 |
| Available for Purchase | For sale in Singapore only |
| Adoption | ISO |