IEC 63275-1:2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
OVERVIEW
IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).
COMMENTS
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PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2022 |
| No. of Pages | 25 |
| ICS Classification | 31.080.30 Transistors |
| Committee | TC 47 |
| Available for Purchase | For sale in Singapore only |
| Adoption | IEC |