IEC 62373-1:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

OVERVIEW

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.

COMMENTS

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PRODUCT DETAILS

Status Current
Edition 2020
No. of Pages 44
ICS Classification 31.080.30 Transistors
Committee TC 47
Available for Purchase For sale in Singapore only
Adoption IEC