IEC 63068-2:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
OVERVIEW
IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.
COMMENTS
-
PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2019 |
| No. of Pages | 25 |
| ICS Classification | 31.080.99 Other semiconductor devices |
| Committee | TC 47 |
| Available for Purchase | For sale in Singapore only |
| Adoption | IEC |