ISO 17560:2014
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
OVERVIEW
ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.
COMMENTS
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PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2014 |
| No. of Pages | 10 |
| ICS Classification | 71.040.40 Chemical analysis |
| Committee | ISO/TC 201/SC 6 |
| Available for Purchase | For sale in Singapore only |
| Adoption | ISO |