IEC 63068-3:2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
OVERVIEW
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
COMMENTS
-
PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2020 |
| No. of Pages | 51 |
| ICS Classification | 31.080.99 Other semiconductor devices |
| Committee | TC 47 |
| Available for Purchase | For sale in Singapore only |
| Adoption | IEC |