IEC 62047-9:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
OVERVIEW
IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.
COMMENTS
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PRODUCT DETAILS
| Status | Current |
|---|---|
| Edition | 2011 |
| No. of Pages | 49 |
| ICS Classification | 31.080.99 Other semiconductor devices |
| Committee | TC 47/SC 47F |
| Available for Purchase | For sale in Singapore only |
| Adoption | IEC |