TR IEC/TS 62804-1:2019

Photovoltaic (PV) modules – Test methods for the detection of potential-induced degradation – Part 1 : Crystalline silicon

OVERVIEW

Defines procedures to test and evaluate the durability of crystalline silicon photovoltaic (PV) modules to the effects of short-term high-voltage stress including potential-induced degradation (PID).

The testing is designed for crystalline silicon PV modules with one or two glass surfaces, silicon cells having passivating dielectric layers, for degradation mechanisms involving mobile ions influencing the electric field over the silicon semiconductor, or electronically interacting with the silicon semiconductor itself. Is not intended for evaluating modules with thin-film technologies, tandem, or heterostructure devices.

Describes methods to measure the module design’s ability to withstand degradation from system voltage effects that manifest in the relatively short term.


COMMENTS

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PRODUCT DETAILS

Status Current
Edition 2019
No. of Pages 22
ICS Classification 27.160 Solar energy engineering
Committee Electrical and Electronic Standards Committee
Available for Purchase Global
Adoption IEC/TS 62804 : 2015 IDT