IEC 60747-9:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
OVERVIEW
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
- reverse-blocking IGBT and its related technical contents have been added;
- reverse-conducting IGBT and its related technical contents have been added;
- some parts of the previous edition have been amended, combined or deleted.
COMMENTS
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PRODUCT DETAILS
Status | Current |
---|---|
Edition | 2019 |
No. of Pages | 160 |
ICS Classification | 31.080.30 Transistors 31.080.01 Semiconductor devices in general |
Committee | TC 47/SC 47E |
Available for Purchase | For sale in Singapore only |
Adoption | IEC |